technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 600 v t c = 80c i c,nom. 50 a t c = 25c i c 70 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1ms, t c = 80c i crm 100 a gesamt-verlustleistung total power dissipation t c = 25c, transistor p tot 250 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 50 a periodischer spitzenstrom repetitive peak forw. current t p = 1ms i frm 100 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 760 a 2 s isolations-prfspannung insulation test voltage rms, f= 50hz, t= 1min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 50a, v ge = 15v, t vj = 25c - 1,95 2,45 v collector-emitter saturation voltage i c = 50a, v ge = 15v, t vj = 125c - 2,20 - v gate-schwellenspannung gate threshold voltage i c = 1ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c ies - 2,2 - nf rckwirkungskapazit?t reverse transfer capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c res - 0,2 - nf kollektor-emitter reststrom v ce = 600v, v ge = 0v, t vj = 25c - 1 500 a collector-emitter cut-off current v ce = 600v, v ge = 0v, t vj = 125c -1-ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: andreas vetter date of publication: 2000-04-26 approved by: michael hornkamp revision: 1 v ce sat i ces kollektor-dauergleichstrom dc-collector current 1 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 charakteristische werte / characteristic values transistor / transistor min. typ. max. i c = 50a, v cc = 300v v ge = 15v, r g = 2,7 ? , t vj = 25c t d,on -40-ns v ge = 15v, r g = 2,7 ? , t vj = 125c -42-ns i c = 50a, v cc = 300v v ge = 15v, r g = 2,7 ? , t vj = 25c t r -9-ns v ge = 15v, r g = 2,7 ? , t vj = 125c -10-ns i c = 50a, v cc = 300v v ge = 15v, r g = 2,7 ? , t vj = 25c t d,off - 120 - ns v ge = 15v, r g = 2,7 ? , t vj = 125c - 130 - ns i c = 50a, v cc = 300v v ge = 15v, r g = 2,7 ? , t vj = 25c t f -12-ns v ge = 15v, r g = 2,7 ? , t vj = 125c -21-ns einschaltverlustenergie pro puls i c = 50a, v cc = 300v, v ge = 15v turn-on energy loss per pulse r g = 2,7 ? , t vj = 125c, l = 15nh abschaltverlustenergie pro puls i c = 50a, v cc = 300v, v ge = 15v turn-off energy loss per pulse r g = 2,7 ? , t vj = 125c, l = 15nh kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =360v, v cemax =v ces -l ce di/dt modulinduktivit?t stray inductance module l ce - 60 - nh modul-leitungswiderstand, anschlsse - chip lead resistance, terminals - chip t c = 25c r cc'+ee' - 8,0 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 50a, v ge = 0v, t vj = 25c - 1,25 1,6 v forward voltage i f = 50a, v ge = 0v, t vj = 125c - 1,20 - v i f = 50a, -di f /dt= 2900a/sec v r = 300v, v ge = -10v, t vj = 25c i rm -88- a v r = 300v, v ge = -10v, t vj = 125c -88- a i f = 50a, -di f /dt= 2900a/sec v r = 300v, v ge = -10v, t vj = 25c q r - 3,4 - c v r = 300v, v ge = -10v, t vj = 125c - 5,6 - c i f = 50a, -di f /dt= 2900a/sec v r = 300v, v ge = -10v, t vj = 25c e rec ---mj v r = 300v, v ge = -10v, t vj = 125c - 1,5 - mj einschaltverz?gerungszeit (ind. last) turn on delay time (inductive load) anstiegszeit (induktive last) rise time (inductive load) abschaltverz?gerungszeit (ind. last) turn off delay time (inductive load) fallzeit (induktive last) fall time (inductive load) e off e on mj - 0,5 - mj - - 1,0 - abschaltenergie pro puls reverse recovery energy a v f rckstromspitze peak reverse recovery current sperrverz?gerungsladung recoverred charge i sc - 225 2 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc - - 0,50 k/w thermal resistance, junction to case diode / diode, dc - - 0,80 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1w/m*k / grease = 1w/m*k r thck - 0,02 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 cti comperative tracking index 225 anzugsdrehmoment f. mech. befestigung mounting torque m -15 4 +15 nm % gewicht weight g 180 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. r thjc 3 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 i c [a] v ce [v] i c [a] v ce [v] 0 20 40 60 80 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 20 40 60 80 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 i c [a] v ge [v] i f [a] v f [v] 0 20 40 60 80 100 5 6 7 8 9 10 11 12 13 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 20 40 60 80 100 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 e [mj] i c [a] e [mj] r g [ ? ? ? ? ] 0,0 0,5 1,0 1,5 2,0 2,5 0 20406080100 eon eoff erec schaltverluste (typisch) e on = f (i c ), e off = f (i c ), e rec = f (i c ) switching losses (typical) r g,on = 2,7 ?, ?, ?, ?, = = = = r g,off = 2,7 ? ? ? ? , v cc = 300v, t vj = 125c 0,0 0,5 1,0 1,5 2,0 2,5 0 5 10 15 20 eon eoff erec schaltverluste (typisch) e on = f (r g ), e off = f (r g ), e rec = f (r g ) switching losses (typical) i c = 50a , v ce = 300v , t vj = 125c 6 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 21,2 262,0 176,2 40,6 i [sec] : igbt 0,0018 0,0240 0,0651 0,6626 r i [k/kw] : diode 281,9 270,4 169,8 77,9 i [sec] : diode 0,0487 0,0169 0,1069 0,9115 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g,off = 2,7 ?, ?, ?, ?, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 ic,modul ic,chip 0,01 0,1 1 0,001 0,01 0,1 1 10 zth:igbt zth:diode 7 (8) bsm 50 gd 60 dlc e3226 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 50 gd 60 dlc e3226 geh?usema?e / schaltbild package outline / circuit diagram 8 (8) bsm 50 gd 60 dlc e3226 2000-02-08
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